![]() ![]() On the contrary, for the thermally treated samples, the crack ![]() Step indicate that for the native oxide sample, the fracture happenedįollowing the propagation of cracks from the surface into the silicon The FTIR spectra of the samples during the unloading Show that thermally treated SiO 2 on silicon wafers hasĪ higher strain resistance and breaking force than the SiO 2 native oxide. The investigation of fracture mechanisms becomes feasible. By recording the alternation in dipole moments, Studies of rectangular samples with dimensions of 30 mm × 10 To FTIR measurements that enables in situ atomic investigations of In this work, we present the design,įabrication, and application of a novel tensile-testing device coupled Of new flexible electronic devices, especially to control the properties Of semiconductor materials is of utmost importance for the design Changes that occur in the micro-mechanical ![]()
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